Hall effect sensor (0~1000)

Hall effect sensor Primary nominal r.m.s. current IPN (A) : 0~1000 Accuracy: 0.5% Good linearity RoHS compliant

EHD series is hall effect sensor

For the electronic measurement of currents:DC,AC,pulsed,mixed, with a galvanic isolation between the primary(high power) circuit and the secondary(electronic) circuit

 

Excellent linearity through the full range 

RoHs compliant

 

 

 

Hall Current Sensor EHD1000

Operating performances ( AT =25°C ) Primary nominal r.m.s. current : 1000 A Primary current measuring range : 0~±2000 A Secondary nominal r.m.s. current : 200 mA Conversion tatio : 1:5000 Supply voltage : ±15~24 ( ±5% ) V Current consumption : 30(@±15V)+IS mA Linearity : ≤±0.1 @0~±IPN % Accuracy :±0.5@IPN,VC=±15V,TA=25°C, % Offset current : Thermal drift of Io : ≤±0.5 (type ±0.1) @-40~+85°C mA Response time : di/dt accurately followed : >100 A/μs Secondary winding resistance : 42 Ω Isolation voltage : 6KV @50(60)HZ/1min Frequency bandwidth : 0~150 KHz

 

General data Operating temperature : -40~+85 °C Storage temperature : -40~+125 °C

 

 

Hall effect sensor (0~1000)